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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *DC Current Gain: hFE= 40(Min)@ IC= 150mA *Complement to Type BD934/936/938/940/942 APPLICATIONS *Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BD933 BD935 VCBO Collector-Base Voltage BD937 BD939 BD941 BD933 BD935 VCEO Collector-Emitter Voltage BD937 BD939 BD941 VEBO IC ICM IB B BD933/935/937/939/941 VALUE 45 60 100 120 140 45 60 80 100 120 5 3 7 0.5 30 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BD933 BD935 VCEO(SUS) Collector-Emitter Sustaining Voltage BD937 BD939 BD941 VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= 1A; IB= 0.1A B BD933/935/937/939/941 CONDITIONS MIN 45 60 TYP. MAX UNIT IC= 100mA ; IB= 0 80 100 120 0.6 1.3 0.05 1 0.1 0.2 40 25 3 250 V V V mA mA mA IC= 1A; VCE= 2V VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150 VCE= VCEOmax; IB= 0 VEB= 5V; IC= 0 IC= 150mA ; VCE= 2V IC= 1A ; VCE= 2V IC= 250mA ; VCE= 10V MHz Switching Times ton toff Turn-On Time IC= 1.0A; IB1= -IB2= 0.1A Turn-Off Time 1.5 3.0 s 0.4 1.0 s isc Websitewww.iscsemi.cn 2 |
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